SPB80N04S2-04, 2N0404, TO-263 Mosfet Transistör

SPB80N04S2-04, 2N0404, N-Channel 40V 80A TO-263 Mosfet Transistör

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SPB80N04S2-04, 2N0404, N-Channel 40V 80A TO-263 Mosfet Transistör

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6980 pF @ 25 V