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IPB027N10N5, 027N10N5, TO-263 SMD Mosfet Transistör
IPB027N10N5, 027N10N5, N-Channel 100V 120A TO-263 SMD Mosfet Transistör
IPB027N10N5, 027N10N5, N-Channel 100V 120A TO-263 SMD Mosfet Transistör, IPB027N10N5ATMA1
| FET Type | N-Channel |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 184µA |
| Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
- Transistör | Akım
- 120 Amper
- Transistör | Tip
- NPN
- Transistör | Kılıf
- TO-263 (D2pak)
- Transistör | Cins
- Mosfet
- Transistör | Voltaj
- 100V
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